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At higher electric field strengths, the hole transport time is greatly reduced. 02s. The temperature and eleetric field dependence of the reeovery time, ~, follow the relationship [53], ‘T- T(0)e[-cE’kr’ (lo) , where E is the electric field strength, T is the temperature, behavior is characteristic of polaron hopping. and c and z(O) are constants. This The dependence of flatband voltage reeovery time on oxide thickness is illustrated in Fig. 22 [53]. This figure is a plot of the recovery time at a temperature of 220 K and an eleetric field of 1 MV/cm.

1). 45 eV) [109], Two possible mechanisms for the latent buildup have been proposed [108]. 6) [11O]. The conversion of oxide traps into interface traps may occur as electrons from the silicon tunnel into oxide traps during a biased anneal. 8 INTERFACE -TRAP “WINDOW” . 6 . 4 . 2 . 0 PRE I 03 I 04 I 05 TIME 106 107 108 (S) Figure 40: Latent buildup of interface traps measured on commercial transistors. 107,108) (After Refs. below) in the neutralization process. A second possible mechanism for the latent buildup is due to the release of hydrogen atoms during irradiation in an adjacent structure and the diffusion of the hydrogen atoms to the Si/Si02 interface.

Coincident with the latent buildup is a rapid decrease in carrier mobility and in the magnitude of oxide-trap charge [107,108]. 47 eV [107,108]. 7-0,8 eV [97,102], see Section 4,5. 1). 45 eV) [109], Two possible mechanisms for the latent buildup have been proposed [108]. 6) [11O]. The conversion of oxide traps into interface traps may occur as electrons from the silicon tunnel into oxide traps during a biased anneal. 8 INTERFACE -TRAP “WINDOW” . 6 . 4 . 2 . 0 PRE I 03 I 04 I 05 TIME 106 107 108 (S) Figure 40: Latent buildup of interface traps measured on commercial transistors.

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